npn BUX11 comset semiconductors 1/3 the BUX11 is silicon multiepitaxial planar npn transistors in jedec to-3. they are intended for use in switching and linear appi cations in military and industrial equipments. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage i b = 0 200 v v cbo collector-base voltage i e = 0 250 v v ebo emitter-base voltage i c = 0 7.0 v v cex collector-emitter voltage v be = -1.5v 250 v i c collector current 20 a i cm collector peak current t p = 10ms 25 a i b base current 4 a p t total power dissipation @ t c = 25 150 watts t j junction temperature 200 c t stg storage temperature -65 to +200 c thermal characteristics symbol ratings value unit r thjc thermal resistance, junction to case 1.17 c/w h h i i g g h h c c u u r r r r e e n n t t , , h h i i g g h h s s p p e e e e d d , , h h i i g g h h p p o o w w e e r r t t r r a a n n s s i i s s t t o o r r
npn BUX11 comset semiconductors 2/3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit v ceo(sus) collector-emitter sustaining voltage (1) i c =200 ma 200 - - v v eb0(sus) emitter-base breakdown voltage (1) i c =0a , i e =50 ma 7 - - v i ceo collector cutoff current v ce =160 v , i b =0a - - 1.5 ma v ce = v cex , v be = -1.5v - - 1.5 i cex collector cutoff current v ce = v cex , v be = -1.5v, t case = 125c - - 6 i ebo emitter cutoff current v eb =5.0 v, i c =0 - - 1 ma i c =6 a , v ce =2.0 v 20 - 60 h fe dc current gain (1) i c =12 a , v ce =4.0 v 10 - - - i c =6 a , i b =0.6 a - 0.3 0.6 v ce(sat) collector-emitter saturation voltage (1) i c =12 a , i b =1.5 a - 0.6 1.5 v be(sat) base-emitter saturation voltage (1) i c =12 a , i b =1.5 a - 1.3 1.5 v symbol ratings test condition(s)sec min typ mx unit v ce =30 v , t s = 1s 5 - - i s/b second breakdown collector current v ce =140 v , t s = 1s 0.15 - - e s/b clamped e s/b collector current v clamp =200 v , l=500 h 12 - - a f t transition frequency v ce =15 v , i c =1 a , f=10 mhz 8 - - mhz t on turn-on time i c =12 a , i b =1.5 a , v cc =150 v - 0.3 1.0 t s storage time - 1.2 1.8 t f file time i c =12 a , v cc =150 v i b1 = -i b2 =1.5 a - 0.24 0.4 s (1) pulse duration = 300 s, duty cycle <= 2%
npn BUX11 comset semiconductors 3/3 mechanical data case to-3 information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice. dimensions (mm) min typ max a 11 - 13.10 b 0.97 - 1.15 c 1.5 - 1.65 d 8.32 - 8.92 f 19 - 20 g 10.70 - 11.1 n 16.50 - 17.20 p 25 - 26 r 4 - 4.09 u 38.50 - 39.30 v 30 - 30.30 pin 1 : base pin 2 : emitter case : collector
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